Datasheet Details
- Part number
- Y27US08121M
- Manufacturer
- Hynix Semiconductor
- File Size
- 796.67 KB
- Datasheet
- Y27US08121M_HynixSemiconductor.pdf
- Description
- HY27US08121M
Y27US08121M Description
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface.
Y27US08121M Applications
* FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data
www. DataSheet4U. com - Pinout compatibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
Sequential Row Read OPTION
: HY27USXX121M
- 3.3V device: VCC = 2.7 t
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