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International Rectifier
International Rectifier

IRFZ34N Datasheet

Power MOSFET


IRFZ34N Datasheet Preview


l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
www.DataSheet4U.com
PD -9.1276C
IRFZ34N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.040
ID = 29A
S
TO-220AB
Max.
29
20
100
68
0.45
± 20
65
16
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
°C/W
8/25/97
Page 1

IRFZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(ON)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
55 ––– –––
––– 0.052 –––
––– ––– 0.040
2.0 ––– 4.0
6.5 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 34
––– ––– 6.8
––– ––– 14
––– 7.0 –––
––– 49 –––
––– 31 –––
––– 40 –––
––– 4.5 –––
––– 7.5 –––
––– 700 –––
––– 240 –––
––– 100 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 16A„
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 16A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 „
VDD = 28V
ID = 16A
RG = 18
RD = 1.8Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 29
showing the
A
integral reverse
––– ––– 100
p-n junction diode.
G
D
S
––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V „
––– 57 86 ns TJ = 25°C, IF = 16A
––– 130 200 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25, IAS = 16A. (See Figure 12)
ƒ ISD 16 A, di/dt 420A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
Page 2

IRFZ34N
1000
100
TOP
BOTT OM
VG S
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5V
1000
100
TOP
BOTT OM
V GS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
4.5V
1
0.1
0.1
20 µ s PU LSE W ID TH
TC = 25 °C
A
1 10 100
VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
1
0.1
0.1
20µs PULSE W IDTH
TC = 175°C
A
1 10 100
VD S , Drain-to-Source V oltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 2 5 °C
TJ = 1 7 5 °C
10
VDS = 25V
20µs PU LSE W ID TH
1A
4 5 6 7 8 9 10
VGS , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
2.4
ID = 26A
2.0
1.6
1.2
0.8
0.4
0.0
VG S = 1 0V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 3
Part Number IRFZ34N
Manufactur International Rectifier
Description Power MOSFET
Total Page 8 Pages
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