• Part: IC61LV12816
  • Description: 128K x 16 Hight Speed SRAM
  • Manufacturer: ICSI
  • Size: 150.42 KB
Download IC61LV12816 Datasheet PDF
ICSI
IC61LV12816
FEATURES - - - - - High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS patible interface levels Single 3.3V ± 10%power supply Fully static operation: no clock or refresh required - Three state outputs - Data control for upper and lower bytes - Industrial temperature available DESCRIPTION The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB)...