IC61LV6416 Datasheet PDF - ICSI 64K x 16 Hight Speed SRAM Specs

IC61LV6416 - 64K x 16 Hight Speed SRAM

Datasheet Summary

Description

RAM organized as 65,536 words by 16 bits.

It is fabricated using ICSI's high-performance CMOS technology.

Features

High-speed access time: 8, 10, 12, and 15 ns.
CMOS low power operation.
250 mW (typical) operating.
250 µW (typical) standby.
TTL compatible interface levels.
Single 3.3V power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.

Datasheet Details

Part number	IC61LV6416
Manufacturer	ICSI
File Size	95.45 KB
Description	64K x 16 Hight Speed SRAM
Datasheet	IC61LV6416 Datasheet
Additional preview pages of the IC61LV6416 datasheet.

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Full PDF Text Transcription

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IC61LV6416 Document Title 64K x 16 Hight Speed SRAM with 3.3V Revision History Revision No 0A 1 Draft Date Remark September 12,2001 History Initial Draft 2 3 4 5 6 7 8 9 10 11 12 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. AHSR026-0A 09/12/2001 1 IC61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 8, 10, 12, and 15 ns • CMOS low power operation — 250 mW (typical) operating — 250 µW (typical) standby • TTL compatible interface levels • Single 3.

Published: Sep 23, 2005 |