Datasheet4U Logo Datasheet4U.com

C1004 - Process C1004

📥 Download Datasheet

Datasheet preview – C1004

Datasheet Details

Part number C1004
Manufacturer IMP Inc
File Size 32.00 KB
Description Process C1004
Datasheet download datasheet C1004 Datasheet
Additional preview pages of the C1004 datasheet.

📁 Similar Datasheet

  • C1000 - Fixed and Adjustable Vitreous Enamel Power Resistors (Ohmite)
  • C1000 - Surface Mount Clock Oscillators (Crystek Crystals)
  • C1000 - Silicon NPN Transistor (ETC)
  • C1002 - Silicon NPN Power Transistors (SavantIC)
  • C1003 - Flashing EL Lamp Driver IC (RCL)
  • C1005 - MULTILAYER CERAMIC CHIP CAPACITORS (TDK)
  • C1005C0G1E102J - Multilayer Ceramic Chip Capacitors (TDK)
  • C1005C0G1E561J - Multilayer Ceramic Chip Capacitors (TDK)
  • C1005C0G1E681J - Multilayer Ceramic Chip Capacitors (TDK)
  • C1005C0G1E821J - Multilayer Ceramic Chip Capacitors (TDK)
Other Datasheets by IMP Inc

    Full PDF Text Transcription

    Click to expand full text
    ® ISO 9001 Registered Process C1004 CMOS 1.0µ m 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.55 74 0.60 7 10 Typical 0.75 0.60 87 0.75 0.8 T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.0µm V1/2 100x1.0µm 100 µA/V2 100x100µm 0.90 µm 100x1.0µm µm Per side V V P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.85 24 0.83 –7 –10 Typical –1.0 0.4 28 0.98 0.85 Maximum –1.15 32 1.
    Published: |