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C1210 Datasheet - IMP Inc

C1210 Process C1210 CMOS 1.2mm Zero Threshold Devices

® ISO 9001 Registered Process C1210 CMOS 1.2µ m Zero Threshold Devices Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 T.

C1210_IMPInc.pdf

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Datasheet Details

Part number:

C1210

Manufacturer:

IMP Inc

File Size:

35.04 KB

Description:

Process c1210 cmos 1.2mm zero threshold devices.

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C1210 C1210 Process C1210 CMOS 1.2mm Zero Threshold Devices IMP Inc

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