C1210 - Process C1210 CMOS 1.2mm Zero Threshold Devices
® ISO 9001 Registered Process C1210 CMOS 1.2µ m Zero Threshold Devices Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis.
Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 T
