BU180 Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector Current -IC= 10A. DC Current Gain- : hFE= 200(Min)@ IC= 5A. Low Collector Saturation Voltage. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number: BU180
Manufacturer: INCHANGE Semiconductor
File Size: 216.19 KB
Datasheet: BU180_INCHANGESemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for line operated switchmode applications such as:
* Switching regulators
* Inverters
* Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 320 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Bas

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BU180 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor

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