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isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.
2N3171H Datasheet
