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2N3171H PNP Transistor

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Description

isc Silicon PNP Power Transistor .
Excellent Safe Operating Area. Collector-Emitter Saturation Voltage- : VCE(sat)= -0. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number
2N3171H
Manufacturer
INCHANGE
File Size
193.66 KB
Datasheet
2N3171H-INCHANGE.pdf
Description
PNP Transistor

Applications

* Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -10 V IC

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