2N3171H
2N3171H is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Excellent Safe Operating Area
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-40
VEBO
Emitter-Base Voltage
-10
Collector Current-Continuous
-3
Collector Power Dissipation@TC=25℃
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
ISC Website：.iscsemi.cn isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS...
