2N6280 Datasheet - INCHANGE

2N6280, Silicon NPN Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) *Minimum Lot-to-Lot variations for robust

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

2N6280-INCHANGE.pdf