2NC5566 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Current Capability. High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min). Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2NC5566
Manufacturer: INCHANGE
File Size: 196.68 KB
Datasheet: 2NC5566-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5

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2NC5566 NPN Transistor INCHANGE

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