2SB1389
INCHANGE
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Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) *Minimum Lot
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DESCRIPTION ·With TO-220F package ·Compleme.
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isc Silicon PNP Darlington Power Transistor
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sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25.
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(INCHANGE)
isc Silicon PNP Darlington Power Transistor
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2SB1383 - Silicon PNP Transistor
(Sanken electric)
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sAbsolute maximum ratings (Ta=25°C)
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isc Silicon PNP Darlington Power Transistor
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2SB1386 - Low Frequency Transistor
(Rohm)
Transistors
Low Frequency Transistor (*20V,*5A)
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436
FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = .
2SB1386 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1386
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.
/ Features
,, 2SD2098 。 Lo.
