Datasheet4U Logo Datasheet4U.com

2SB1640 PNP Transistor

2SB1640 Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.

2SB1640 Applications

* Designed for audio frequency power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -

📥 Download Datasheet

Preview of 2SB1640 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1640
Manufacturer
INCHANGE
File Size
203.89 KB
Datasheet
2SB1640-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB1641 - Silicon PNP Epitaxial Transistor (Toshiba)
  • 2SB1642 - Silicon PNP Transistor (Toshiba Semiconductor)
  • 2SB1643 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1644 - Power Transistor (Rohm)
  • 2SB1644J - PNP -4A -80V Power Transistor (Rohm)
  • 2SB1645 - Silicon PNP Transistor (Panasonic Semiconductor)
  • 2SB1647 - Silicon PNP Transistor (Sanken electric)
  • 2SB1648 - Silicon PNP Transistor (Sanken electric)

📌 All Tags

INCHANGE 2SB1640-like datasheet