2SB1640 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2SB1640
Manufacturer: INCHANGE
File Size: 203.89 KB
Datasheet: 2SB1640-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -

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2SB1640 PNP Transistor INCHANGE

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