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2SB791 PNP Transistor

2SB791 Description

isc Silicon PNP Darlington Power Transistor 2SB791 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= -4A. Low Saturation Voltage.

2SB791 Applications

* Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICP Collect

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Datasheet Details

Part number
2SB791
Manufacturer
INCHANGE
File Size
212.36 KB
Datasheet
2SB791-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB791-like datasheet