2SB791 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor 2SB791 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain : hFE= 1000(Min) @IC= -4A. Low Saturation Voltage.

📥 Download Datasheet

2SB791 Datasheet Preview — Preview of 2SB791 PDF

Datasheet Specifications

Part number: 2SB791
Manufacturer: INCHANGE
File Size: 212.36 KB
Datasheet: 2SB791-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICP Collect

2SB791 Distributors

📁 Related Datasheet

2SB791K 2SB790 2SB792 2SB792A 2SB793 2SB793A

📌 All Tags

2SB791 PNP Transistor INCHANGE

INCHANGE 2SB791-like datasheet