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2SB794 PNP Transistor

2SB794 Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB794 .
High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A). Low Collector Saturation Voltage- : VCE(sat)= -1. Built-i.

2SB794 Applications

* Designed for general-purpose amplifier ,hammer driver and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

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Datasheet Details

Part number
2SB794
Manufacturer
INCHANGE
File Size
185.57 KB
Datasheet
2SB794-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB794-like datasheet