2SB795 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB795 .
High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A). Low Collector Saturation Voltage- : VCE(sat)= -1. Built-i.

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Datasheet Specifications

Part number: 2SB795
Manufacturer: INCHANGE
File Size: 185.59 KB
Datasheet: 2SB795-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for general-purpose amplifier ,hammer driver and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous

2SB795 Distributors

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2SB795 PNP Transistor INCHANGE

INCHANGE 2SB795-like datasheet