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2SC2832 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SC2832 .
High Breakdown Voltage- : V(BR)CBO= 800V(Min). High Switching Speed. Low Collector Saturation Voltage. Minimum Lot-to-Lot variations.

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Datasheet Specifications

Part number
2SC2832
Manufacturer
INCHANGE
File Size
189.92 KB
Datasheet
2SC2832-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak

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