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2SC4388 NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4388 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Good Linearity of hFE. Complement to Type 2SA1673. 100% avalanche tested.

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Datasheet Specifications

Part number
2SC4388
Manufacturer
INCHANGE
File Size
191.97 KB
Datasheet
2SC4388-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Conti

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