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2SC792 NPN Transistor

2SC792 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC792 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-L.

2SC792 Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.

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Datasheet Details

Part number
2SC792
Manufacturer
INCHANGE
File Size
172.89 KB
Datasheet
2SC792-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC792-like datasheet