3DK106 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. DC Current Gain- : hFE= 30~250(Min. Collector-Emitter Saturation Vol.

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Datasheet Specifications

Part number: 3DK106
Manufacturer: INCHANGE
File Size: 201.37 KB
Datasheet: 3DK106-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-200 V VCEO Collector-Emitter Voltage 50-200 V VEBO Emitter-Base Voltage 4 V IC Collector

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3DK106 NPN Transistor INCHANGE

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