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A1964 Silicon PNP Power Transistor

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Description

INCHANGE Semiconductor  Product Specification  isc Silicon PNP Power Transistor  2SA1964  .
Collector­Emitter Breakdown Voltage­  : V(BR)CEO= ­160V(Min) . Good Linearity of hFE . Wide Area of Safe Operation . Complement to T.

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Datasheet Specifications

Part number
A1964
Manufacturer
INCHANGE
File Size
172.01 KB
Datasheet
A1964-INCHANGE.pdf
Description
Silicon PNP Power Transistor

Applications

* Power amplifier applications.  
* Driver stage amplifier applications.   ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  SYMBOL  PARAMETER  VALUE  UNIT  VCBO  Collector­Base Voltage  ­160  V  VCEO  Collector­Emitter Voltage  ­160  V  VEBO  Emitter­Base Voltage  ­5  V  IC  Collector Current­C

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Silicon PNP Power Transistor INCHANGE
INCHANGE A1964-like datasheet