AOI11S60 Datasheet, Mosfet, INCHANGE

AOI11S60 Features

• Mosfet
• Drain Current
    –ID= 11A@ TC=25℃
• Drain Source Voltage- : VDSS= 600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max)
• 100%

PDF File Details

Part number:

AOI11S60

Manufacturer:

INCHANGE

File Size:

267.79kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

AOI11S60 Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continu

TAGS

AOI11S60

INCHANGE

📁 Related Datasheet

AOI11S60 - Power Transistor (Alpha & Omega Semiconductors)
AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the adv.

AOI1N60 - 1.3A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using a.

AOI1N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOI1N60 FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

AOI206 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
AOD206/AOI206 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • Hig.

AOI208 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOI208 FEATURES ·Drain Current –ID=54A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resist.

AOI21357 - P-Channel MOSFET (Alpha & Omega Semiconductors)
AOD21357/AOI21357 30V P-Channel MOSFET General Description • Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Hal.

AOI2210 - 200V N-Channel MOSFET (Alpha & Omega Semiconductors)
AOD2210/AOI2210 200V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-sw.

AOI2210 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOI2210 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Res.

AOI2606 - N-Channel MOSFET (Alpha & Omega Semiconductors)
AOD2606/AOI2606 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-swi.

AOI2606 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOI2606 FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Res.