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AOI4S60

N-Channel MOSFET

AOI4S60 Features

* Drain Current

* ID=4A@ TC=25℃

* Drain Source Voltage- : VDSS=600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in

AOI4S60 General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse.

AOI4S60 Datasheet (269.60 KB)

Preview of AOI4S60 PDF

Datasheet Details

Part number:

AOI4S60

Manufacturer:

INCHANGE

File Size:

269.60 KB

Description:

N-channel mosfet.

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TAGS

AOI4S60 N-Channel MOSFET INCHANGE

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