AOI4T60P Datasheet - INCHANGE

AOI4T60P, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOI4T60P

Features

* Drain Current
* ID= 4.0A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 83 W TJ Max.
Operating Junction Temperat

AOI4T60P-INCHANGE.pdf