AOT266L Datasheet - INCHANGE

AOT266L, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOT266L *

Features

* Drain Current
* ID= 140A@ TC=25℃
* Drain Source Voltage- : VDSS= 60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 140 A IDM Drain Current-Single Pulsed 450 A PD Total Dissipation @TC=25℃ 268 W Tj Max.
Operating Junction Temperature

AOT266L-INCHANGE.pdf