AOTF22N50 Datasheet - INCHANGE

AOTF22N50, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOTF22N50 *

Features

* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 22 15 88 PD Total Dissipation 50 Tj Operating Junction Tempera

AOTF22N50-INCHANGE.pdf