AOTF2606L Datasheet - INCHANGE

AOTF2606L, N-Channel MOSFET

sc N-Channel MOSFET Transistor AOTF2606L *

Features

* Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and ge

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 54 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 36.5 W Tj Max.
Operating Junction Temperature

AOTF2606L-INCHANGE.pdf