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AOTF2606L N-Channel MOSFET

AOTF2606L Description

sc N-Channel MOSFET Transistor AOTF2606L *.

AOTF2606L Features

* Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and ge

AOTF2606L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 54 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 36.5 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOTF2606L
Manufacturer
INCHANGE
File Size
257.68 KB
Datasheet
AOTF2606L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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