AOTF27S60 Datasheet - INCHANGE

AOTF27S60, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOTF27S60 *

Features

* Drain Current
* ID= 27A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 27 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 50 W Tj Max.
Operating Junction Temperature -

AOTF27S60-INCHANGE.pdf