AOTF298L Datasheet - INCHANGE

AOTF298L, N-Channel MOSFET

isc N-Channel MOSFET Transistor AOTF298L *

Features

* Drain Current
* ID= 33A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 14.5mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Pulsed 130 A PD Total Dissipation @TC=25℃ 33 W Tj Max.
Operating Junction Temperature -

AOTF298L-INCHANGE.pdf