AOW10N60 Datasheet, Mosfet, INCHANGE

AOW10N60 Features

• Mosfet
• Drain Current
    –ID=10A@ TC=25℃
• Drain Source Voltage- : VDSS=600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)
• 100% av

PDF File Details

Part number:

AOW10N60

Manufacturer:

INCHANGE

File Size:

293.64kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

AOW10N60 Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continu

TAGS

AOW10N60

INCHANGE

📁 Related Datasheet

AOW10N60 - 10A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced hi.

AOW10N65 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOW10N65 FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-R.

AOW10N65 - 10A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltag.

AOW10T60 - 10A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOW10T60/AOWF10T60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10T60 & AOWF10T60 are fabricated using an advanced high vol.

AOW11N60 - 11A N-Channel MOSFET (Alpha & Omega Semiconductors)
AOW11N60 600V,11A N-Channel MOSFET General Description The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designe.

AOW11N60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOW11N60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R.

AOW11S60 - Power Transistor (Alpha & Omega Semiconductors)
AOW11S60/AOWF11S60 600V 11A α MOS TM Power Transistor General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM hig.

AOW11S60 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOW11S60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-R.

AOW11S65 - Power Transistor (Alpha & Omega Semiconductors)
AOW11S65/AOWF11S65 650V 11A α MOS TM Power Transistor General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM hig.

AOW11S65 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor AOW11S65 FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res.