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APT11N80BC3G

N-Channel MOSFET

APT11N80BC3G Features

* Drain Current

* ID=11A@ TC=25℃

* Drain Source Voltage- : VDSS=800V(Min)

* Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use in

APT11N80BC3G General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Plu.

APT11N80BC3G Datasheet (371.87 KB)

Preview of APT11N80BC3G PDF

Datasheet Details

Part number:

APT11N80BC3G

Manufacturer:

INCHANGE

File Size:

371.87 KB

Description:

N-channel mosfet.

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APT11N80BC3G N-Channel MOSFET INCHANGE

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