APT11N80BC3G - N-Channel MOSFET

INCHANGE

APT11N80BC3G Datasheet Preview — Preview of APT11N80BC3G PDF

Datasheet Details

Part number	APT11N80BC3G
Manufacturer	INCHANGE
File Size	371.87 KB
Description	N-Channel MOSFET
Datasheet	APT11N80BC3G-INCHANGE.pdf

APT11N80BC3G Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R

Features

Drain Current.
ID=11A@ TC=25℃.
Drain Source Voltage- : VDSS=800V(Min).
Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Feb 22, 2021 |