APT30N60BC6 Datasheet - INCHANGE

APT30N60BC6, N-Channel MOSFET

isc N-Channel MOSFET Transistor

Features

* Drain Current
* ID=30A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) =0.125Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 89 A PD Total Dissipation @TC=25℃ 219 W TJ Max.
Operating Junction Tempera

APT30N60BC6-INCHANGE.pdf