APT6045BVR Datasheet, Mosfet, INCHANGE

APT6045BVR Features

• Mosfet
• Drain Current
    –ID=15A@ TC=25℃
• Drain Source Voltage- : VDSS=600V(Min)
• Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max)
• 100% ava

PDF File Details

Part number:

APT6045BVR

Manufacturer:

INCHANGE

File Size:

371.23kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

APT6045BVR Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Contin

TAGS

APT6045BVR

INCHANGE

📁 Related Datasheet

APT6045BVR - Power MOSFET (Advanced Power Technology)
APT6045BVR 600V 15A 0.450Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo.

APT6045BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
D TO-247 G S APT6040BN 600V ® 18.0A 0.40Ω 17.0A 0.45Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol.

APT6045CVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6045CVR 600V 11.8A 0.450Ω POWER MOS V ® TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. .

APT6045SVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. (Advanced Power Technology)
APT6045SVR 600V 15A 0.450Ω POWER MOS V ® D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tech.

APT6040BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS (Advanced Power Technology)
D TO-247 G S APT6040BN 600V ® 18.0A 0.40Ω 17.0A 0.45Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol.

APT6041CLL - Power MOSFET (Advanced Power Technology)
APT6041CLL 600V 14A 0.410Ω .. POWER MOS 7 ® R MOSFET TO-254 Power MOS 7 is a new generation of low loss, high voltage, N-Channel.

APT6010B2FLL - Power MOSFET (Microsemi)
600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL .

APT6010B2FLL - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor APT6010B2FLL FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source O.

APT6010B2LL - Power MOSFET (Advanced Power Technology)
600V 54A 0.100W APT6010B2LL APT6010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po.

APT6010B2LL - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :.