B1370 - PNP Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RA

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	B1370
Manufacturer	INCHANGE
File Size	205.35 KB
Description	PNP Transistor
Datasheet	B1370 Datasheet
Additional preview pages of the B1370 datasheet.

📁 Similar Datasheet

B1370 - 2SB1370 (ROHM Electronics)
B1375 - 2SB1375 (Toshiba Semiconductor)
B130 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B130 - SCHOTTKY BARRIER RECTIFIER (EIC)
B130-E3 - Surface Mount Schottky Barrier Rectifier (Vishay)
B130-M3 - Surface Mount Schottky Barrier Rectifier (Vishay)
B1301 - PNP SIlicon Transistor (Renesas)
B1302 - PNP Epitaxial Planar Silicon Transistor (Sanyo)
B130B - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
B130BQ - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes)

Other Datasheets by INCHANGE

B1353 - Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

Published: Dec 23, 2021 |