BC847 Datasheet - INCHANGE

BC847, NPN Transistor

isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION *DC Current Gain- : hFE=110-800 @IC= 2mA *Collector-Emitter Breakdown Volt

Applications

* Ideally suited for automatic insertion.

* For switching and AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissip

BC847-INCHANGE.pdf