BCR8PM - Triac
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM
OUTLINE DRAWING
10.5 MAX 5.2
Dimensions in.
BCR8PM - Triac
(Powerex Power Semiconductors)
BCR8PM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
8 Amperes/400-600 Volts
OUTLINE DRAWING
C 5.2
1.2.
BCR8PM-12L - Triac
(Renesas Technology)
BCR8PM-12L
Triac
Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
REJ03G0461-0200 Rev.2.00 Nov.08.2004
Features
T (RMS.
BCR8PM-12LA - Thyristor
(INCHANGE)
isc Thyristors
INCHANGE Semiconductor
BCR8PM-12LA
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimu.
BCR8PM-12LA - Triac
(Renesas)
.
BCR8PM-12LD - Triac
(Renesas Technology)
BCR8PM-12LD
Triac
Medium Power Use
Features
IT (RMS) : 8 A VDRM : 600 V IFGTI , IRGTI, IRGT III : 50 mA Viso : 2000 V
Outline
RENESAS Package .
BCR8PM-12LE - Triac
(Renesas Technology)
BCR8PM-12LE
600V – 8A - Triac
Medium Power Use
Features
• IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA • Viso : 1500 V
Outline
RENES.
BCR8PM-12LG - Triac
(Renesas Technology)
BCR8PM-12LG
Triac
Medium Power Use
Features
IT (RMS) : 8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 2000 V
Outline
RENESAS Package c.
BCR8PM-12LG - Thyristor
(INCHANGE)
isc Thyristors
INCHANGE Semiconductor
BCR8PM-12LG
DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High mutation capability ·Minimu.
BCR8PM-14 - Triac
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM-14
OUTLINE DRAWING
Dimensions in mm
10.
