BD224 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD224 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min). DC Current Gain -hFE =30(Min)@ IC= -0. Good Linearity of hFE. Wide Are.

📥 Download Datasheet

BD224 Datasheet Preview — Preview of BD224 PDF

Datasheet Specifications

Part number: BD224
Manufacturer: INCHANGE
File Size: 169.12 KB
Datasheet: BD224-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -

BD224 Distributors

📁 Related Datasheet

BD2240G BD2241G BD2242G BD2243G BD22441G-C BD2244G-M

📌 All Tags

BD224 PNP Transistor INCHANGE

INCHANGE BD224-like datasheet