BD745B, BD745 Datasheet - INCHANGE

BD745B, BD745, NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION *Collector Current -IC= 20A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745;

Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B

BD745-INCHANGE.pdf