BDT29 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors BDT29/A/B/C .
DC Current Gain -hFE = 40(Min)@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT.

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Datasheet Specifications

Part number: BDT29
Manufacturer: INCHANGE
File Size: 207.86 KB
Datasheet: BDT29-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT29 80 BDT29A 100 VCBO Collector-Base Voltage BDT29B 120 BDT29C 140 BDT29 40 BDT29A 60 VCEO Collector-Emitte

BDT29 Distributors

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BDT29 NPN Transistor INCHANGE

INCHANGE BDT29-like datasheet