BDT31F Silicon NPN Power Transistors

INCHANGE

Description

isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF .
DC Current Gain -hFE = 25(Min)@ IC= 1. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- B.

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Datasheet Specifications

Part number: BDT31F
Manufacturer: INCHANGE
File Size: 231.56 KB
Datasheet: BDT31F-INCHANGE.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT BDT31F 80 VCBO Collector-Base Voltage BDT31AF 100 BDT31BF 120 V BDT31CF 140 BDT31DF 160 BDT31F 40

BDT31F Distributors

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BDT31F Silicon NPN Power Transistors INCHANGE

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