BDT65B, BDT65 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector Current -IC= 12A. High DC Current Gain-hFE= 1000(Min)@ IC= 5A. Complement to Type BDT64/A/B/C. Minimum Lot-to-Lot variation.

📥 Download Datasheet

BDT65B Datasheet Preview — This datasheet PDF includes multiple part numbers: BDT65B, BDT65. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BDT65B, BDT65
Manufacturer: INCHANGE
File Size: 211.67 KB
Datasheet: BDT65-INCHANGE.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: BDT65B, BDT65.
Please refer to the document for exact specifications by model.

Applications

* Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65 60 VCER Collector-Emitter Voltage BDT65A 80 BDT65B 100 V BDT65C 120 BDT65 60 VCEO Collector-Emitter Voltage BDT65A 80 BDT65B 100

BDT65B Distributors

📁 Related Datasheet

BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A

📌 All Tags

BDT65 NPN Transistor INCHANGE

INCHANGE BDT65B-like datasheet