BDV67D Datasheet - INCHANGE

BDV67D, NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector Current -IC= 16A *Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Ma

Applications

* Designed for audio output stages and general amplifier and switching applications BDV67D ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 VCEO Collector-Emitter Voltage 150 UNIT V V VEBO Emitter-Base Voltage 5 V IC Collector Current-Conti

BDV67D-INCHANGE.pdf