BU526 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BU526 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min. High Speed Switching. High Power Dissipation. Minimum Lot-to-Lot variat.

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Datasheet Specifications

Part number: BU526
Manufacturer: INCHANGE
File Size: 201.88 KB
Datasheet: BU526-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CER Collector-Emitter Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-C

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BU526 NPN Transistor INCHANGE

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