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BUL416T NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min. Low Collector Saturation Voltage : VCE(sat) = 1.

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Datasheet Specifications

Part number
BUL416T
Manufacturer
INCHANGE
File Size
207.37 KB
Datasheet
BUL416T-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Contin

BUL416T Distributors

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NPN Transistor INCHANGE
INCHANGE BUL416T-like datasheet