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BUW25 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- :V(BR)CEO= 400V(Min. High Speed Switching. 100% avalanche tested. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number
BUW25
Manufacturer
INCHANGE
File Size
201.30 KB
Datasheet
BUW25-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuo

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