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BUX82 NPN Transistor

BUX82 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83. High Switching Speed. Minimum Lot-to-Lot variations f.

BUX82 Applications

* Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX82 800 VCES Collector-Emitter Voltage V BUX83 1000 BUX82 400 VCEO Collector-Emitter Voltage V BUX83 450 VCER Collector-Emitter Voltage RBE= 50Ω BUX82

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Datasheet Details

Part number
BUX82
Manufacturer
INCHANGE
File Size
201.47 KB
Datasheet
BUX82-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BUX82-like datasheet