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BUZ76 N-Channel MOSFET

BUZ76 Description

isc N-Channel Mosfet Transistor BUZ76 *.

BUZ76 Features

* Drain Source Voltage- : VDSS= 400V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
* Fast Switching Speed
* Low Drive Requirement
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION Designed for witched mode power supp

BUZ76 Applications

* switching regulators, switching converters.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 3 A IDM Drain Current-Single Plused 12 A Ptot Total Dissipation

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Datasheet Details

Part number
BUZ76
Manufacturer
INCHANGE
File Size
225.08 KB
Datasheet
BUZ76-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE BUZ76-like datasheet