C2750
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
- High Current Capability
- High Power Dissipation
APPLICATIONS
- Designed for high speed, high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 15 A
ICM Collector Current-Peak
30 A
IB Base Current-Continuous
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SC2750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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