C2750 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) High Current Capability High Power Dissipation APPLICATIONS

applications.

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Datasheet Details

Part number	C2750
Manufacturer	Inchange Semiconductor
File Size	205.81 KB
Description	Silicon NPN Power Transistor
Datasheet	C2750 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2750 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5A 100 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.