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D357 Datasheet - INCHANGE

D357 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Good Linearity of hFE *Complement to Type 2SB527 APPLICATIONS *Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO C.

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Datasheet Details

Part number:

D357

Manufacturer:

INCHANGE

File Size:

134.97 KB

Description:

Silicon npn power transistor.

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D357 D357 Silicon NPN Power Transistor INCHANGE

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