D357 - Silicon NPN Power Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *Good Linearity of hFE *Complement to Type 2SB527 APPLICATIONS *Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO C
