D750
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
- Wide Area of Safe Operation
- High Current Capability
APPLICATIONS
- Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT
VCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
7V 15 A
ICM Collector Current-Peak
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
30 A 100 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
2SD750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10m A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5m A; IC=...
