Part number: DMJ70H1D0SV3
Manufacturer: INCHANGE
File Size: 269.45KB
Download: 📄 Datasheet
Description: N-Channel MOSFET
*Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
700
V
±30
V
ID
Drain Current-C.
*Drain Current
–ID= 6.0A@ TC=25℃
*Drain Source Voltage-
: VDSS= 700V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
*100% a.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Co.
Image gallery
TAGS
📁 Related Datasheet
DMJ70H1D0SV3 - N-CHANNEL MOSFET
(DIODES)
NEW PRODUCT
NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART
DMJ70H1D0SV3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 700V
RDS(ON) M.
DMJ70H1D3SH3 - N-CHANNEL MOSFET
(Diodes)
NEW PRODUCT
Product Summary
BVDSS 700V
RDS(on) max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to mi.
DMJ70H1D3SH3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 4.6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 700V(Min) ·Static Drain-Source On-Resistance.
DMJ70H1D3SI3 - N-CHANNEL MOSFET
(Diodes)
A D V A N C E DNIEN FWOPRRMOADT IU COTN
Product Summary
BVDSS 700V
RDS(on) max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
T.
DMJ70H1D3SJ3 - N-CHANNEL MOSFET
(Diodes)
NEW PRODUCT
Product Summary
BVDSS 700V
RDS(ON) Max 1.3Ω @ VGS = 10V
ID TC = +25°C
4.6A
Description and Applications
This MOSFET is designed to mi.
DMJ70H1D4SV3 - N-CHANNEL MOSFET
(DIODES)
NEW PRODUCT
NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART
DMJ70H1D4SV3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 700V
RDS(ON) M.
DMJ70H1D4SV3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 700V(Min) ·Static Drain-Source On-Resistance.
DMJ70H1D5SV3 - N-CHANNEL MOSFET
(DIODES)
NEW PRODUCT
NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART
DMJ70H1D5SV3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 700V
RDS(ON) M.
DMJ70H1D5SV3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 700V(Min) ·Static Drain-Source On-Resistance.
DMJ70H600SH3 - N-CHANNEL MOSFET
(DIODES)
A D V A N C E DNIEN FWOPRRMOADT IU COTN
Product Summary
BVDSS 700V
RDS(ON) Max 0.6Ω @ VGS = 10V
ID TC = +25°C
11A
DMJ70H600SH3
N-CHANNEL ENHANCEM.
